View APT11GF120BRDQ1_467342.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

TYPICAL PERFORMANCE CURVES (R)
APT11GF120BRDQ1 APT11GF120BRDQ1G*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
APT11GF120BRDQ1(G) 1200V
FAST IGBT & FRED
The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epitaxial Diode (FRED) offers superior ruggedness and fast switching speed. * Low Forward Voltage Drop * RBSOA and SCSOA Rated * High Freq. Switching to 20KHz * Ultra Low Leakage Current
G
TO -2 47
C
E
* Ultrafast Soft Recovery Anti-parallel Diode
C G E
MAXIMUM RATINGS
Symbol VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 100C Pulsed Collector Current
1
All Ratings: TC = 25C unless otherwise specified.
APT11GF120BRDQ1(G) UNIT Volts
1200 30 25 14 24 24A @ 1200V 156 -55 to 150 300
Amps
Switching Safe Operating Area @ TJ = 150C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Watts C
STATIC ELECTRICAL CHARACTERISTICS
Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 500A) Gate Threshold Voltage (VCE = VGE, I C = 350A, Tj = 25C) MIN TYP MAX Units
1200 4.5 5.5 2.5 3.1
2 2
6.5 3.0 500 3000
100
Collector-Emitter On Voltage (VGE = 15V, I C = 8A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 8A, Tj = 125C) Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25C)
Volts
I CES I GES
A nA
12-2005 052-6212 Rev A
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125C) Gate-Emitter Leakage Current (VGE = 20V)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA td(on) td(off) tf Eon1 Eon2 td(on) tr td(off) tf Eon1 Eon2 Eoff Eoff tr Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge
3
APT11GF120BRDQ1(G)
Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VCE = 600V I C = 8A TJ = 150C, R G = 10, VGE = Inductive Switching (25C) VCC = 800V VGE = 15V RG = 10 I C = 8A VGE = 15V MIN TYP MAX UNIT pF V nC
620 90 40 10.0 65 10 35 44 7 5 100 55 300 485 285 7 5 115 46 295 915 325 J
ns ns A
Gate-Emitter Charge Gate-Collector ("Miller ") Charge Switching Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy
44 55 4 5
15V, L = 100H,VCE = 1200V
Turn-on Switching Energy (Diode)
6
TJ = +25C Inductive Switching (125C) VCC = 800V VGE = 15V RG = 10 I C = 8A
J
Turn-on Switching Energy (Diode)
6
TJ = +125C
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol RJC RJC WT Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight MIN TYP MAX UNIT C/W gm
.80 1.18 5.9
1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode.
12-2005 Rev A
5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
APT Reserves the right to change, without notice, the specifications and information contained herein.
052-6212
TYPICAL PERFORMANCE CURVES
30 25 TJ = 25C 20 15 10 5 0 TJ = 125C
V
GE
= 15V
40 35 IC, COLLECTOR CURRENT (A) 30 25 20 15 10 5 0
APT11GF120BRDQ1(G)
15V 14V 13V 12V
TJ = -55C
IC, COLLECTOR CURRENT (A)
11V 10V
9V 8V
30 25 20 15 10
FIGURE 1, Output Characteristics(TJ = 25C) VGE, GATE-TO-EMITTER VOLTAGE (V)
250s PULSE TEST<0.5 % DUTY CYCLE
0 1 2 3 4 5 6 7 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
16 14 12 10
FIGURE 2, Output Characteristics (TJ = 125C)
I = 8A C T = 25C
J
0 5 10 15 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
VCE = 240V VCE = 600V
IC, COLLECTOR CURRENT (A)
TJ = -55C
8 6 4 2 0 0 10
VCE = 960V
TJ = 25C
5 0
TJ = 125C
0 2 4 6 8 10 12 14 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics
20 30 40 50 60 GATE CHARGE (nC) FIGURE 4, Gate Charge
70
80
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
5 4 3 2 1 0
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
6
5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
IC = 16A
IC = 16A
IC = 8A IC = 4A
IC = 8A IC = 4A
10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage 1.15
8
25 50 75 100 125 150 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 35
1.05 1.00 0.95 0.90 0.85 0.80 0.75 0.70 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, Threshold Voltage vs. Junction Temperature
IC, DC COLLECTOR CURRENT(A)
VGS(TH), THRESHOLD VOLTAGE
1.10
30 25 20 15 10 5 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 8, DC Collector Current vs Case Temperature 0 -50 12-2005 052-6212 Rev A
(NORMALIZED)
10
td (OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns) VGE = 15V
140 120 100 80 60 40 20 0
VCE = 800V RG = 10 L = 100H VGE =15V,TJ=125C
APT11GF120BRDQ1(G)
8
6
VGE =15V,TJ=25C
4
2 VCE = 800V
20 16 12 8 4 0 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 12 10
tr, RISE TIME (ns)
RG = 10, L = 100H, VCE = 800V TJ = 25 or 125C,VGE = 15V
0
TJ = 25C, or 125C RG = 10 L = 100H
20 16 12 8 4 0 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current
90 80 70
RG = 10, L = 100H, VCE = 800V
tf, FALL TIME (ns)
8 6 4 2 0
60 50 40 30 20 10
TJ = 25C, VGE = 15V
TJ = 125C, VGE = 15V
20 16 12 8 4 0 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 2500
EON2, TURN ON ENERGY LOSS (J) EOFF, TURN OFF ENERGY LOSS (J)
= 800V V CE = +15V V GE R = 10
G
20 16 12 8 4 0 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current
800 700 600 500 400 300 200 100
TJ = 25C
= 800V V CE = +15V V GE R = 10
G
0
2000
TJ = 125C
TJ = 125C
1500
1000
500
TJ = 25C
20 16 12 8 4 0 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 4000
SWITCHING ENERGY LOSSES (J)
= 800V V CE = +15V V GE T = 125C
J
0
20 16 12 8 4 0 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current
2500
= 800V V CE = +15V V GE R = 10
G
0
3500 3000 2500 2000 1500 1000 500 0 0
SWITCHING ENERGY LOSSES (J)
Eon2,16A
Eon2,16A
2000
1500
1000
Eoff,16A Eon2,4A Eoff,4A
Eon2,8A
12-2005
Eon2,8A Eon2,4A Eoff,4A Eoff,16A Eoff,8A
500
Rev A
Eoff,8A
052-6212
50 40 30 20 10 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance
125 100 75 50 25 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature 0
0
TYPICAL PERFORMANCE CURVES
1,000 500 C, CAPACITANCE ( F) IC, COLLECTOR CURRENT (A) Cies
25
APT11GF120BRDQ1(G)
20
P
15
100 50
Coes Cres
10
5
10 0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage
0 200 400 600 800 1000 1200 1400 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18,Minimim Switching Safe Operating Area
0
1.00
ZJC, THERMAL IMPEDANCE (C/W)
0.80
D = 0.9 0.7 0.5 0.3
0.60
0.40
Note:
PDM
t1 t2
0.20 0.1 0 0.05 10-5 10-4
SINGLE PULSE
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
160 100 FMAX, OPERATING FREQUENCY (kHz) 50
T = 75C
C
RC MODEL Junction temp. (C) 0.437 Power (watts) 0.363 Case temperature. (C) 0.0432 0.00221
F
T = 100C
10 5
T = 125C J D = 50 % V = 800V CE R = 4.3
C
= min (fmax, fmax2) 0.05 fmax1 = td(on) + tr + td(off) + tf
max
fmax2 = Pdiss =
Pdiss - Pcond Eon2 + Eoff TJ - TC RJC
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
4 6 8 10 12 14 16 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current
1
G
0
2
052-6212
Rev A
12-2005
APT11GF120BRDQ1(G)
Gate Voltage
APT15DQ120
10% td(on) TJ = 125C
V CC
IC
V CE
tr 90% 5% 10%
Collector Current
5%
Collector Voltage
A D.U.T.
Switching Energy
Figure 21, Inductive Switching Test Circuit
Figure 22, Turn-on Switching Waveforms and Definitions
90%
Gate Voltage
td(off) tf
TJ = 125C
Collector Voltage
90%
10%
0
Collector Current
Switching Energy
Figure 23, Turn-off Switching Waveforms and Definitions
052-6212
Rev A
12-2005
TYPICAL PERFORMANCE CURVES
APT11GF120BRDQ1(G)
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MAXIMUM RATINGS
Symbol IF(AV) IF(RMS) IFSM Symbol VF Characteristic / Test Conditions Maximum Average Forward Current (TC = 127C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45C, 8.3ms) Characteristic / Test Conditions IF = 8A Forward Voltage IF = 16A IF = 8A, TJ = 125C MIN
All Ratings: TC = 25C unless otherwise specified.
APT11GF120BRDQ1(G) UNIT Amps
15 29 110
TYP MAX UNIT Volts
STATIC ELECTRICAL CHARACTERISTICS 2.34 2.83 2.00
MIN TYP MAX UNIT ns nC
DYNAMIC CHARACTERISTICS
Symbol trr trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM Characteristic Test Conditions Reverse Recovery Time I = 1A, di /dt = -100A/s, V = 30V, T = 25C F F R J Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current
1.20 ZJC, THERMAL IMPEDANCE (C/W) D = 0.9 1.00 0.80 0.60 0.40 0.20 0 0.7
21 240 260 3 290 960 6 130 1340 19 -
IF = 15A, diF/dt = -200A/s VR = 800V, TC = 25C
-
Amps ns nC Amps ns nC Amps
IF = 15A, diF/dt = -200A/s VR = 800V, TC = 125C
-
IF = 15A, diF/dt = -1000A/s VR = 800V, TC = 125C
0.5
Note:
PDM
0.3 SINGLE PULSE
t1 t2
0.1 0.05 10-5 10-4
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 24a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
RC MODEL Junction temp. (C) 0.676 Power (watts) 0.504 Case temperature. (C) 0.0440 0.00147
FIGURE 24b, TRANSIENT THERMAL IMPEDANCE MODEL
052-6212
Rev A
12-2005
60 50 40 30 20 10 0 trr, REVERSE RECOVERY TIME (ns) TJ = 175C TJ = 125C TJ = 25C TJ = -55C
400 350 300 250 200 150 100 50 0 30A
APT11GF120BRDQ1(G)
T = 125C J V = 800V
R
IF, FORWARD CURRENT (A)
15A
7.5A
1 2 3 4 5 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 25. Forward Current vs. Forward Voltage 2500 Qrr, REVERSE RECOVERY CHARGE (nC) 30A
T = 125C J V = 800V
R
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE(A/s) Figure 26. Reverse Recovery Time vs. Current Rate of Change IRRM, REVERSE RECOVERY CURRENT (A) 25
T = 125C J V = 800V
R
0
30A
2000
20
1500 15A
15
1000 7.5A
10
15A
500
5
7.5A
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 27. Reverse Recovery Charge vs. Current Rate of Change 1.2 Kf, DYNAMIC PARAMETERS (Normalized to 1000A/s) 1.0 0.8 0.6
0
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 28. Reverse Recovery Current vs. Current Rate of Change 35 30 25 IF(AV) (A) 20 15 10 5
Duty cycle = 0.5 T = 175C
J
0
trr trr IRRM
Qrr
Qrr
0.4 0.2 0.0
25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 29. Dynamic Parameters vs. Junction Temperature 80 CJ, JUNCTION CAPACITANCE (pF) 70 60 50 40 30 20 10 10 100 200 VR, REVERSE VOLTAGE (V) Figure 31. Junction Capacitance vs. Reverse Voltage 0 1
0
75 100 125 150 175 Case Temperature (C) Figure 30. Maximum Average Forward Current vs. CaseTemperature
0
25
50
052-6212
Rev A
12-2005
TYPICAL PERFORMANCE CURVES
+18V 0V diF /dt Adjust
Vr
APT10078BLL
APT11GF120BRDQ1(G)
D.U.T. 30H
trr/Qrr Waveform
PEARSON 2878 CURRENT TRANSFORMER
Figure 32. Diode Test Circuit
1 2 3 4
IF - Forward Conduction Current diF /dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Zero
1
4
5 3 2
trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. Qrr - Area Under the Curve Defined by IRRM and trr.
0.25 IRRM
5
Figure 33, Diode Reverse Recovery Waveform and Definitions
TO-247 Package Outline
e1 SAC: Tin, Silver, Copper
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC 20.80 (.819) 21.46 (.845)
15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
Collector (Cathode)
3.55 (.138) 3.81 (.150)
4.50 (.177) Max. 0.40 (.016) 0.79 (.031)
2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084)
19.81 (.780) 20.32 (.800)
5.45 (.215) BSC 2-Plcs.
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
052-6212
Dimensions in Millimeters and (Inches)
Rev A
2.21 (.087) 2.59 (.102)
12-2005
1.01 (.040) 1.40 (.055)
Gate Collector (Cathode) Emitter (Anode)

▲Up To Search▲

Price & Availability of APT11GF120BRDQ1

	To Download APT11GF120BRDQ1 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .